Lithography mask

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United States of America Patent

PATENT NO 9995999
SERIAL NO

15181066

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Abstract

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A lithography mask includes a substrate, a reflective multilayer (ML) on the substrate, and a barrier layer on the reflective ML. The barrier layer includes at least one material selected from the group consisting of ruthenium nitride, hafnium oxide, aluminum nitride, boron carbide, boron nitride, and a combination thereof.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chia-Jen Jhudong Township, Hsinchu County, TW 98 1413
Lee, Hsin-Chang Zhubei, TW 203 1090
Lin, Yun-Yue Hsinchu, TW 77 363
Yen, Anthony Hsinchu, TW 157 3414

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