Method for depositing a piezoelectric film containing AIN, and a piezoelectric film containing AIN

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United States of America Patent

PATENT NO 9994950
SERIAL NO

14901817

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Abstract

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A method for depositing a piezoelectric film may be provided containing AlN on a substrate by means of magnetron sputtering of at least two targets—of which at least one target contains aluminum—within a vacuum chamber, into which a mixture of gases containing at least reactive nitrogen gas and an inert gas is introduced, and during which magnetron sputtering the unipolar pulse mode and the bipolar pulse mode are alternately used. A film may be provided containing AlN of formula AlXNYOZ, where (0.1≤X≤1.2); (0.1≤Y≤1.2) and (0.001≤Z≤0.1).

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Patent Owner(s)

Patent OwnerAddress
FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG E VMUNICH GERMANY MUNICH BAVARIA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Barth, Stephan Dresden, DE 2 4
Bartzsch, Hagen Dresden, DE 3 7
Frach, Peter Radeberg, DE 6 88
Glöß, Daniel Dresden, DE 1 3

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