Off-axis epitaxial lift off process
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United States of America Patent
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Jun 12, 2018
Issued Date -
N/A
app pub date -
Aug 15, 2011
filing date -
Aug 15, 2011
priority date (Note) -
In Force
status (Latency Note)
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Abstract
Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process- and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of <110> at 0°.
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International Classification(s)
- 2011 Application Filing Year
- C30B Class
- 359 Applications Filed
- 298 Patents Issued To-Date
- 83.01 % Issued To-Date
Cited Art Landscape
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- 0 Citation Count
- C30B Class
- 0 % this patent is cited more than
- 7 Age
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