Data sense amplifier and a memory device with open or folded bit line structure
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United States of America Patent
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Jun 5, 2018
Issued Date -
Jun 9, 2016
app pub date -
May 6, 2015
filing date -
Dec 8, 2014
priority date (Note) -
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Abstract
A data sense amplifier may include: first and second external nodes, wherein a potential difference occurs between the first and second external nodes when a memory cell is selected; an amplification unit suitable for generating and amplifying a potential difference between first and second nodes in response to the potential difference between the first and second external nodes; and a switching unit suitable for electrically coupling the first and second external nodes to the first and second nodes, respectively, after a predetermined time elapses from when the memory cell is selected.
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