Silicon depletion modulators with enhanced slab doping
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United States of America Patent
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Jun 5, 2018
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app pub date -
Mar 10, 2017
filing date -
Dec 11, 2012
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Abstract
Disclosed herein are methods, structures, and devices for a silicon carrier-depletion based modulator with enhanced doping in at least part of slab regions between waveguide core and contact areas. Compared to prior designs, this modulator exhibits lower optical absorption loss and better modulation bandwidth without sacrificing the modulation efficiency when operating at comparable bandwidth settings.
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