Crystallization substrate, crystallization container, crystallization device, and crystal producing method

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United States of America Patent

PATENT NO 9987610
SERIAL NO

14375676

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Abstract

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A crystallization substrate of the present invention includes a noble metal vapor-deposited film having an absorbance in a 500 to 1,000 nm wavelength range and formed in all or part of one surface of the substrate. The noble metal vapor-deposited film has an average thickness of 0.1 to 60 nm. The noble metal vapor-deposited film is a continuous film with a pit formed by vapor deposition in part of the film and surrounded by the continuous film.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL UNIVERSITY CORPORATION GUNMA UNIVERSITY2 ARAMAKI-MACHI 4-CHOME MAEBASHI-SHI GUNMA 371-8510

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Okutsu, Tetsuo Kiryu, JP 6 18

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