Silicon carbide semiconductor device and method for manufacturing same

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United States of America Patent

PATENT NO 9984879
SERIAL NO

15497544

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Abstract

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A trench has first to third side surfaces respectively constituted of first to third semiconductor layers. A first side wall portion included in a first insulating film has first to third regions respectively located on the first to third side surfaces. A second insulating film has a second side wall portion located on the first side wall portion.

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Patent Owner(s)

  • SUMITOMO ELECTRIC INDUSTRIES LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Masuda, Takeyoshi Osaka, JP 168 907
Saitoh, Yu Osaka, JP 52 197
Uchida, Kosuke Osaka, JP 57 248

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