Ion implantation apparatus
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United States of America Patent
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May 29, 2018
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app pub date -
Sep 29, 2016
filing date -
Sep 30, 2015
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Abstract
An ion implantation apparatus performs a plurality of ion implantation processes having different implantation conditions to a same wafer successively. The plurality of ion implantation processes are: (a) provided so that twist angles of the wafer differ from each other; (b) configured so that an ion beam is irradiated to a wafer surface to be processed that moves in a reciprocating movement direction; and (c) provided so that a target value of a beam current density distribution of the ion beam is variable in accordance with a position of the wafer in the reciprocating movement direction. Before performing the plurality of ion implantation processes to the same wafer successively, a control device executes a setup process in which a plurality of scanning parameters corresponding to the respective implantation conditions of the plurality of ion implantation processes are determined collectively.
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