Wafer producing method
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United States of America Patent
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May 29, 2018
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N/A
app pub date -
Jun 3, 2016
filing date -
Jun 5, 2015
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Abstract
A wafer having an off angle α is produced from a hexagonal single crystal ingot having an upper surface, a c-plane exposed to the upper surface, and a c-axis perpendicular to the c-plane. The ingot is supported by a wedge member having a wedge angle α equal to the off angle α, thereby inclining the upper surface of the ingot by the off angle α with respect to a horizontal plane. A modified layer is formed by setting the focal point of a laser beam inside the ingot and next applying it to the upper surface, thereby linearly forming a modified layer inside the ingot and cracks extending from the modified layer along the c-plane. The focal point is moved in the second direction to index the focal point by a predetermined amount.
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