Silicon carbide semiconductor device
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United States of America Patent
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May 22, 2018
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app pub date -
Aug 1, 2017
filing date -
Sep 14, 2016
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Abstract
An embodiment of a silicon carbide semiconductor device includes one or more inner cells each having a MOSFET and one or more outer peripheral cells that does not have a MOSFET structure, and the area (surface area) of the p+ contact region of each of the outermost peripheral cells is less than the surface area of an p+ contact region of each of the inner cells, for example, so that a unit total resistance of p+ contact regions of the outermost peripheral cells, as measured in a depth direction of the semiconductor substrate with respect to a unit area in a surface of the semiconductor substrate, is greater than a unit total resistance of the p+ contact regions of the inner cells, as measured in the depth direction of the semiconductor substrate with respect to the unit area in the surface of the semiconductor substrate.
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