Wide bandgap semiconductor device with vertical superjunction edge termination for the drift region

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United States of America Patent

PATENT NO 9978832
SERIAL NO

15684359

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A vertical superjunction edge termination structure for the drift region of wide bandgap semiconductor devices that provides a low resistance and high off voltage allowing the breakdown voltage of the superjunction drift region to be raised.

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THE GOVERNMENT OF THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY875 NORTH RANDOLPH STREET SUITE 1425 ARLINGTON VA 22203

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Inventor Name Address # of filed Patents Total Citations
Martino, Christopher Adrian Arnold, US 2 0

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