Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
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United States of America Patent
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May 22, 2018
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app pub date -
Jan 27, 2017
filing date -
Mar 16, 2016
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Abstract
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate; a nickel silicide film provided on a surface of the silicon carbide semiconductor substrate and functioning as an ohmic contact; and an extraction electrode contacting the ohmic contact on a side different from a silicon carbide semiconductor substrate side. The silicon carbide semiconductor substrate side of the ohmic contact is mainly formed from a NiSi phase and an extraction electrode side thereof is mainly formed from a Ni2Si phase. The ohmic contact includes carbon on the silicon carbide semiconductor substrate and includes no carbon on the extraction electrode side.
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