Silicon electro-optical modulator
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United States of America Patent
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May 22, 2018
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May 2, 2017
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Jun 6, 2013
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Abstract
Disclosed are designs and methods of fabrication of silicon carrier-depletion based electro-optical modulators having doping configurations that produce modulators exhibiting desirable modulation efficiency, optical absorption loss and bandwidth characteristics. The disclosed method of fabrication of a modulator having such doping configurations utilizes counter doping to create narrow regions of relatively high doping levels near a waveguide center.
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