Semiconductor device and method of manufacturing the same

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United States of America Patent

PATENT NO 9977186
SERIAL NO

15186610

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Abstract

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A semiconductor device including an optical waveguide and a p-type semiconductor portion is configured as follows. The optical waveguide includes: a first semiconductor layer formed on an insulating layer; an insulating layer formed on the first semiconductor layer; and a second semiconductor layer formed on the insulating layer. The p-type semiconductor portion includes the first semiconductor layer. The film thickness of the p-type semiconductor portion is smaller than that of the optical waveguide. By forming the insulating layer between the first semiconductor layer and the second semiconductor layer, control of the film thicknesses of the optical waveguide and the p-type semiconductor portion is facilitated. Specifically, when the unnecessary second semiconductor layer is removed by etching in a step of forming the p-type semiconductor portion, the insulating layer which is the lower layer functions as an etching stopper, and the film thickness of the p-type semiconductor portion can be easily adjusted.

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Patent Owner(s)

Patent OwnerAddress
RENESAS ELECTRONICS CORPORATIONTOKYO JAPAN

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nakashiba, Yasutaka Ibaraki, JP 341 1961
Watanuki, Shinichi Ibaraki, JP 32 91

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