Semiconductor structure and manufacturing method thereof
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United States of America Patent
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May 22, 2018
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app pub date -
Apr 26, 2017
filing date -
Feb 26, 2016
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Abstract
A method of manufacturing a semiconductor structure includes receiving a first substrate including a dielectric layer disposed over the first substrate; forming a sensing structure and a bonding structure over the dielectric layer; disposing a conductive layer on the sensing structure; disposing a barrier layer over the dielectric layer; removing a first portion of the barrier layer to at least partially expose the conductive layer on the sensing structure; and removing a second portion of the barrier layer to at least partially expose the bonding structure.
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