Piezoelectric thin film and method for manufacturing the same, and piezoelectric element

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United States of America Patent

PATENT NO 9972769
SERIAL NO

14732988

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Abstract

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A piezoelectric thin film comprising aluminum nitride containing magnesium and hafnium, wherein a content of the hafnium based on 100 atomic % of the magnesium is 8 atomic % or more and less than 100 atomic %, and a total content of the magnesium and hafnium based on a sum of a content of the magnesium, hafnium, and aluminum is in a range of 47 atomic % or less.

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Patent Owner(s)

Patent OwnerAddress
MURATA MANUFACTURING CO LTDKYOTO JAPAN KYOTO
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYJAPAN'S TOKYO KASUMIGASEKI CHIYODA A CHOME 3 TIMES 1 TOKYO TOKYO METROPOLIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akiyama, Morito Tosu, JP 37 591
Honda, Atsushi Nagaokakyo, JP 107 937
Nagase, Toshimi Tosu, JP 5 51
Nishikubo, Keiko Tosu, JP 12 56
Uehara, Masato Tosu, JP 15 102
Umeda, Keiichi Nagaokakyo, JP 42 757

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