Methods of forming power semiconductor devices having superjunction structures with pillars having implanted sidewalls
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United States of America Patent
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May 15, 2018
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N/A
app pub date -
Oct 31, 2016
filing date -
Jan 2, 2015
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Abstract
Methods of forming a power semiconductor device are provided in which a semiconductor drift layer that is doped with impurities having a first conductivity type is formed on a semiconductor substrate. A portion of the semiconductor drift layer is removed to form a recessed region in the semiconductor drift layer and to define a first semiconductor pillar. Impurities having a second conductivity type that is opposite the first conductivity type are implanted into a first sidewall of the semiconductor drift layer that is exposed by the recessed region to convert a portion of the first semiconductor pillar into a second semiconductor pillar. A third semiconductor pillar is formed in the recessed region.
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