Schottky barrier diode and manufacturing method thereof
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United States of America Patent
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May 15, 2018
Issued Date -
N/A
app pub date -
Oct 19, 2015
filing date -
Dec 17, 2014
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Abstract
A technique stabilizing properties of SBDs is provided. An SBD is provided with a p-type contact region in contact with an anode electrode, and an n-type drift region in Schottky contact with the anode electrode. The p-type contact region includes a first p-type region having a corner portion, a second p-type region connected to the corner portion, and an edge filling portion located at a connection between the first p-type region and the second p-type region. First and second extended lines intersect at an acute angle, where the first extended line is a line extended from a contour of the first p-type region toward the connection and the second extended line is a line extended from a contour of the second p-type region toward the connection. An acute angle edge formed between the first extended line and the second extended line is filled with the edge filling portion.
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