Mask data generation method, mask data generation system, and recording medium
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United States of America Patent
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May 15, 2018
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app pub date -
Sep 4, 2014
filing date -
Jun 27, 2014
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Abstract
According to one embodiment, there is provided a mask data generation method. The mask data generation method includes obtaining depth information about a pattern depth of a hole included in design information about a semiconductor device. The mask data generation method includes obtaining a first correction rule used to correct, in terms of the pattern depth, a process conversion difference between a resist pattern and a processed pattern. The mask data generation method includes determining temporary mask data including a lithography target pattern by applying a first process conversion difference correction processing to a dimension of hole pattern arranged in design layout data based on the depth information and the first correction rule.
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