Nonvolatile memory device and calibration method for the same
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United States of America Patent
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May 15, 2018
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Aug 22, 2017
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Aug 22, 2017
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Abstract
The present disclosure provides a calibration method for a nonvolatile memory device having a plurality of unit cells, each of the unit cells corresponding to a word line and a bit line of the nonvolatile memory device. The calibration method includes: calibrating a word signal pulse of each of the word lines with a first calibration value corresponding to the word line; calibrating a bit signal pulse of each of the bit lines with a second calibration value corresponding to the bit line; and calibrating each of the unit cells according to the word line and the bit line corresponding to the unit cell.
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