Method and apparatus for producing large, single-crystals of aluminum nitride

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United States of America Patent

PATENT NO 9970127
SERIAL NO

15231141

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Abstract

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Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm−2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.

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Patent Owner(s)

Patent OwnerAddress
CRYSTAL IS INC70 COHOES AVENUE GREEN ISLAND NY 12183

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bondokov, Robert T Watervliet, US 43 826
Morgan, Kenneth E Castleton, US 23 730
Rojo, Juan Carlos South Beach, US 22 235
Schowalter, Leo Latham, US 9 92
Slack, Glen A Scotia, US 42 1293
Smart, Joseph A Mooresville, US 12 680

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