Gate driving circuit for insulated gate-type power semiconductor element
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United States of America Patent
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May 8, 2018
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app pub date -
Jul 3, 2014
filing date -
Jul 3, 2014
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Abstract
A gate driving circuit for an insulated gate-type power semiconductor element includes an Nch MOSFET which turns on the insulated gate-type power semiconductor element, a Pch MOSFET which turns off the insulated gate-type power semiconductor element, a control circuit which turns on the Nch MOSFET by applying a positive voltage to the gate electrode of the Nch MOSFET, and which turns on the Pch MOSFET by applying a negative voltage to the gate electrode of the Pch MOSFET, and a power supply which applies a negative voltage to the drain electrode of the Pch MOSFET and to a negative-side electrode of the control circuit, which applies a positive voltage to the drain electrode of the Nch MOSFET, and which applies to a positive-side electrode of the control circuit a positive voltage whose absolute value is larger than absolute value of the positive voltage applied to the drain electrode of the Nch MOSFET.
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