III-V lasers with integrated silicon photonic circuits
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United States of America Patent
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May 8, 2018
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Jun 21, 2016
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Jul 24, 2013
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Abstract
III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light.
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