Method of doped germanium formation
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United States of America Patent
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May 8, 2018
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app pub date -
Jan 27, 2017
filing date -
Sep 19, 2016
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Abstract
Implementations described herein generally relate to methods and systems for depositing layer on substrates, and more specifically, to methods for forming boron or gallium-doped germanium on silicon-containing surfaces. In one implementation, a method of processing a substrate is provided. The method comprises exposing a substrate having an exposed silicon-germanium surface and an exposed dielectric surface to a pre-treatment process, selectively depositing a boron-doped or a gallium-doped layer on the exposed silicon-germanium surface and exposing the substrate to a post-treatment process.
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