Method for manufacturing silicon carbide semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 8, 2018
Issued Date -
N/A
app pub date -
May 9, 2014
filing date -
Jun 12, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Loading Importance Indicators... 
Abstract
Included are the steps of: preparing a silicon carbide substrate having an epitaxial layer formed thereon; forming an upper-layer film on the epitaxial layer; and removing at least a portion of the upper-layer film in an outer peripheral portion of the silicon carbide substrate, and patterning the upper-layer film.
First Claim
Other Claims data not available
Family
Loading Family data...
International Classification(s)
- 2014 Application Filing Year
- H01L Class
- 23828 Applications Filed
- 21803 Patents Issued To-Date
- 91.51 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Nov 8, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Nov 8, 2029 |
