Method for etching a silicon-containing substrate
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 8, 2018
Issued Date -
N/A
app pub date -
Aug 22, 2016
filing date -
Aug 25, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Techniques herein provide a chamber and substrate cleaning solution for etching and removing byproducts between separate etching steps. Such techniques include using a cleaning step based on fluorine chemistry, which is executed in between separate etch steps or divided etch steps. Such a technique can be executed in situ for improved efficiency. Other benefits include increasing etching depth/aspect ratios, and preventing post-etching defects including physical contact with neighboring gates, etc. Techniques herein are especially beneficial when applied to relatively small feature openings.
First Claim
Family
International Classification(s)
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- C03C:CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREO....
- G01L:MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL ....
- C23F:NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM S....
- C11D:DETERGENT COMPOSITIONS
- B44C:PRODUCING DECORATIVE EFFECTS
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully