Semiconductor device and electronic apparatus of a cascode-coupled system
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United States of America Patent
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Mar 13, 2018
Grant Date -
Jul 21, 2016
app pub date -
Jun 8, 2015
filing date -
Jun 2, 2014
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Abstract
The manufacturing yield of a semiconductor device is improved. There is provided a semiconductor device of a cascode coupling system, which is equipped with a plurality of normally-on junction FETs using as a material, a substance larger in bandgap than silicon, and a normally-off MOSFET using silicon as a material. At this time, the semiconductor chip has a plurality of junction FET semiconductor chips (semiconductor chip CHP0 and semiconductor chip CHP1) formed with the junction FETs in a divided fashion, and a MOSFET semiconductor chip (semiconductor chip CHP2) formed with the MOSFET.
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