Gate-stack structure with a diffusion barrier material
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United States of America Patent
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Apr 24, 2018
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app pub date -
Aug 18, 2016
filing date -
Aug 18, 2016
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Abstract
This invention relates to an apparatus, system, and method for creating a high-k gate stack structure that includes a passivation layer. The passivation layer can be constructed from a deposition of silicon carbide. The silicon carbide provides robustness against oxidation, which can reduce the capacity of the stack. The silicon carbide is thermodynamically stable during the deposition process and results in a clean interface.
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