Nano vacuum gap device with a gate-all-around cathode
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United States of America Patent
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Apr 24, 2018
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app pub date -
Apr 13, 2016
filing date -
Apr 14, 2015
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Abstract
A semiconductor power handling device, includes a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode by a nano-vacuum gap. An array of semiconductor power handling devices, each comprising a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode pillar by a nano-vacuum gap. The semiconductor power handling devices can be arranged as rows and columns and can be interconnected to meet the requirements of various applications. The array of power handling devices can be fabricated on a single substrate.
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