Semiconductor device having milti-height structure and method of manufacturing the same
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United States of America Patent
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Apr 17, 2018
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app pub date -
Mar 28, 2017
filing date -
Mar 28, 2017
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Abstract
A semiconductor device having semiconductor device having a multi-height structure is provided. The semiconductor device having a multi-height structure includes a semiconductor substrate. A first structure and a second structure are respectively disposed on the semiconductor substrate and connected to each other. The second structure includes a limiting layer disposed on the upper surface of the semiconductor substrate, a first polysilicon layer disposed conformally on the limiting layer and the semiconductor substrate, and a second polysilicon layer disposed conformally on the first polysilicon layer. A ridge of the second polysilicon layer is disposed near an edge of the second structure beside the first structure, vertically aligned with the limiting layer and defined as a limiting block. A bottom anti-reflection coating (BARC) layer of a low-viscosity material blanketly overlying a top surface of the second structure has an external surface substantially parallel to the top surface of the second structure.
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