Memory management method, memory storage device and memory controlling circuit unit
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United States of America Patent
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Apr 17, 2018
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Mar 3, 2015
filing date -
Dec 27, 2014
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Abstract
A memory management method, a memory storage device and a memory controlling circuit unit are provided. The method includes: programming data into a plurality of memory cells of a rewritable non-volatile memory module; determining whether a storage state of the data conforms with a first condition or a second condition based on a default bias range and a threshold voltage distribution of the memory cells storing the data; performing a first operation if the storage state of the data conforms with the first condition; and performing a second operation if the storage state of the data conforms with the second condition. Accordingly, the probability of misidentifying the valid data as the invalid data may be reduced.
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