Extreme ultraviolet lithography photomasks
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United States of America Patent
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Apr 17, 2018
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app pub date -
Apr 27, 2016
filing date -
Apr 27, 2016
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to modified surfaces of extreme ultraviolet lithography photomasks and methods of manufacture. The structure includes a reflective surface having a patterned design, and a black border region at edges of the patterned design. The black border region includes a modified surface morphology to direct light away from reaching a subsequent mirror.
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