Semiconductor nanocrystals and methods of preparation

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United States of America Patent

PATENT NO 9945050
SERIAL NO

13572012

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Abstract

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A method for preparing semiconductor nanocrystals comprises reacting cation precursors and anion precursors in a reaction mixture including one or more acids, one or more phenol compounds, and a solvent to produce semiconductor nanocrystals having a predetermined composition. A method for forming a coating on at least a portion of a population of semiconductor nanocrystals is also disclosed. The method comprises forming a first mixture including a population of semiconductor nanocrystals, one or more amine compounds, and a first solvent; adding cation precursors and anion precursors to the first mixture at a temperature sufficient for growing a semiconductor material on at least a portion of an outer surface of at least a portion of the population of semiconductor nanocrystals; and initiating addition of one or more acids to the first mixture after addition of the cation and anion precursors is initiated. Semiconductor nanocrystals and populations thereof are also disclosed.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG RESEARCH AMERICA INC665 CLYDE AVENUE MOUNTAIN VIEW CA 94043

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Breen, Craig Somerville, US 66 1687
Kamplain, Justin W Bartlesville, US 13 53
Song, Inia Watertown, US 1 19
Steckel, Jonathan S Carlisle, US 53 1856
Wang, Chunming Acton, US 101 498
Zhu, Zhengguo Chelmsford, US 42 707

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