Thin plate separating method
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United States of America Patent
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Apr 10, 2018
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app pub date -
Apr 14, 2016
filing date -
Apr 15, 2015
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Abstract
A thin plate is separated from an SiC substrate having a first surface, an opposite second surface, a c-axis extending from the first surface to the second surface, and a c-plane perpendicular to the c-axis. The thin plate is formed by epitaxial growth on the first surface of the SiC substrate. The plate is separated by a separation start point forming step of setting the focal point of a laser beam near the first surface of the SiC substrate from the second surface, and applying the laser beam to the second surface to form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point. An external force is applied to the SiC substrate to separate the thin plate from the SiC substrate at the separation start point.
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