Method for manufacturing semiconductor device

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United States of America Patent

PATENT NO 9941115
SERIAL NO

13950957

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Abstract

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A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.

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Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dairiki, Koji Isehara, JP 117 2505
Dozen, Yoshitaka Tochigi, JP 58 1072
Sugiyama, Eiji Tochigi, JP 70 1417
Tamura, Tomoko Atsugi, JP 23 602
Tsurume, Takuya Tochigi, JP 85 2212

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