CHAMBER WITH FLOW-THROUGH SOURCE

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United States of America Patent

SERIAL NO

15285176

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Abstract

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Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region in which a substrate can be contained. The chamber may also include an inductively coupled plasma source positioned between the showerhead and the processing region. The inductively coupled plasma source may include a conductive material within a dielectric material.

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Patent Owner(s)

Patent OwnerAddress
APPLIED MATERIALS INCP O BOX 450-A SANTA CLARA CA 95052

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lubomirsky, Dmitry Cupertino, US 306 29707

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