Semiconductor device and method of making a semiconductor device
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United States of America Patent
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Mar 27, 2018
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N/A
app pub date -
Dec 9, 2016
filing date -
Jan 5, 2016
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Abstract
A semiconductor device and a method of making the same. The device includes a substrate having an AlGaN layer located on one or more GaN layers, for forming a two dimensional electron gas at an interface between the AlGaN layer and the GaN layer. The device also includes a source contact. The device further includes a drain contact. The device also includes a gate contact located between the source contact and the drain contact. The gate contact includes a gate electrode. The gate contact also includes an electrically insulating layer located between the gate electrode and the AlGaN layer. The insulating layer includes at least one aperture for allowing holes generated during an off-state of the device to exit the device through the gate electrode.
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