Semiconductor storage device with voltage generator which generates voltages and currents for read and write operations

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United States of America Patent

PATENT NO 9928903
SERIAL NO

15248216

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Abstract

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According to one embodiment, a semiconductor storage device includes: a memory cell including a variable resistance element; a bit line coupled to the memory cell; and a first circuit applying a first voltage to the bit line in a write operation for the memory cell. When a temperature of the variable resistance element is lower than or equal to a first temperature, a temperature coefficient of the first voltage is 0. When the temperature of the variable resistance element is higher than the first temperature, the temperature coefficient of the first voltage is negative.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATIONTOKYO 108-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ogiwara, Ryu Yokohama Kanagawa, JP 84 720
Takashima, Daisaburo Yokohama Kanagawa, JP 247 3491

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