Nonvolatile variable resistance memory circuit which includes magnetic tunnel junction element

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United States of America Patent

PATENT NO 9928891
SERIAL NO

15023101

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Abstract

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One end of a current path of a second field-effect transistor is connected to a gate of a first field-effect transistor. One end of a magnetic tunnel junction element is connected to one end of a current path of the first field-effect transistor. A first control terminal is connected to another end of the current path of the first field-effect transistor. A second control terminal is connected to another end of the magnetic tunnel junction element. A third control terminal is connected to another end of the current path of the second field-effect transistor.

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Patent Owner(s)

Patent OwnerAddress
TOHOKU UNIVERSITYSENDAI CITY MIYAGI PREFECTURE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Endoh, Tetsuo Sendai, JP 121 2763
Ohsawa, Takashi Sendai, JP 187 5504

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