Semiconductor device
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United States of America Patent
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Mar 27, 2018
Grant Date -
Feb 2, 2017
app pub date -
Jun 21, 2016
filing date -
Jul 30, 2015
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Abstract
An SOI substrate includes a base substrate, a polycrystalline silicon layer formed on the base substrate, an insulating layer formed on the polycrystalline silicon layer, and a semiconductor layer formed on the insulating layer, and optical waveguides are formed in the semiconductor layer of the SOI substrate. Thus, by arranging the polycrystalline silicon layer under the insulating layer, the insulating layer can be made thin. Since the polycrystalline silicon layer includes a plurality of grains (a mass of grains made of a single crystal Si), even when leakage of light is generated beyond the insulating layer, reflection (diffusion) of light can be suppressed. In addition, by arranging the polycrystalline silicon layer under the insulating layer, the insulating layer can be made thin, so that distortion of a substrate can be suppressed.
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