Variable metal multi-gate metal oxide semiconductor capacitor radiation sensor for improved gain and tissue equivalence

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United States of America Patent

PATENT NO 9927531
SERIAL NO

14870298

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Abstract

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A method and apparatus is disclosed for differentially altering the radiation response across multiple MOSCAP sensors by placing different thin gate materials with different atomic numbers on a series of MOS-based radiation sensors. The secondary electrons created in high-atomic weight materials (such as gold) at lower incident photon energy levels enable a tissue equivalent radiation response and radiations source identification/differentiation. This is a desirable alternative to using filters with different coefficients across a series of MOSCAP radiation sensor which will attenuate the signal and degrade the device form factor. The method and apparatus disclosed achieves the same functionality but with inherent gain instead of attenuation, thus increasing sensitivity. This will improve the minimum resolvable dose for x-rays and low-energy gammas (high-energy gammas will remain the same), and produces a response that can distinguish the energy level of incident radiation photon.

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Patent Owner(s)

Patent OwnerAddress
PURDUE RESEARCH FOUNDATION1801 NEWMAN ROAD WEST LAFAYETTE IN 47906

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Peroulis, Dimitrios West Lafayette, US 39 139
Salasky, Mark Raymond St. John, US 3 4
Scott, Sean M West Lafayette, US 52 1145
Valentino, Daniel John Naperville, US 5 6
Walerow, P Alexander Momence, US 8 47

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