Method of manufacturing a pressure vessel for growing single crystals

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United States of America Patent

PATENT NO 9926642
SERIAL NO

14657455

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Abstract

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An object of the present invention is to manufacture single crystals of high quality on an industrial production scale by preventing impurities from being mixed in single crystals when the single crystals are produced by the solvothermal method.

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Patent Owner(s)

Patent OwnerAddress
JAPAN STEEL WORKS M&E INC4 CHATSUCHO MURORAN-SHI HOKKAIDO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akatsuka, Shigeharu Tokyo, JP 2 5
Matsushita, Keiichiro Tokyo, JP 3 13
Sasagawa, Yuji Muroran, JP 3 5
Wakao, Osamu Muroran, JP 5 8
Yamamura, Yoshihiko Muroran, JP 19 158

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