Silicon-based image sensor with improved reading dynamic range
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United States of America Patent
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Mar 20, 2018
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app pub date -
Oct 30, 2014
filing date -
Nov 4, 2013
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Abstract
In an image sensor, the effective capacitance of the storage node NS of the pixel, which stores the charges (the electrons) collected by the photosensitive element of the pixel, is modified with the aid of a feedback loop 100 which influences the supply VREFP of the follower transistor T3 connected to the storage node, in such a way that the apparent capacitance of the storage node depends on the gain GL of the loop. By modifying the gain, the capacitance of the storage node and therefore the charge/voltage conversion factor, which is inversely proportional to this capacitance, is modified.
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