Semiconductor light emitting element and method of producing the same
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United States of America Patent
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Mar 20, 2018
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app pub date -
Sep 23, 2016
filing date -
Sep 26, 2015
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Abstract
A method of producing a semiconductor light emitting element includes providing a semiconductor stack including a first semiconductor layer, an active layer, a second semiconductor layer, and a first insulating layer. An upper surface of the first insulating layer is partially covered with a mask. The semiconductor stack is etched to expose the first semiconductor layer in a region not covered by the mask. The mask is removed. A second insulating layer covering from the upper surface of the first insulating layer to an exposed region of the first semiconductor layer is provided. The second insulating layer is etched without masking to remove at least a portion of the second insulating layer covering the exposed region to expose the exposed region. A first conducting layer covering from the exposed region of the first semiconductor layer to a region above the upper surface of the first insulating layer is provided.
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