Field effect transistors and methods of forming same
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United States of America Patent
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Mar 20, 2018
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N/A
app pub date -
Dec 15, 2016
filing date -
Jun 15, 2015
priority date (Note) -
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Abstract
Semiconductor devices and methods of forming the same are provided. A first source/drain layer is formed over a substrate. A channel layer is formed over the first source/drain layer. A second source/drain layer is formed over the channel layer. The first source/drain layer, the channel layer, and the second source/drain layer are patterned to form a fin-shaped structure. A gate stack is formed on a sidewall of the fin-shaped structure. The fin-shaped structure is patterned to expose a top surface of the first source/drain layer.
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