Thin-film transistor and method for fabricating the same, array substrate and method for fabricating the same, and display device
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United States of America Patent
Stats
-
Mar 20, 2018
Issued Date -
N/A
app pub date -
Apr 13, 2016
filing date -
Apr 24, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A thin-film transistor (TFT) includes a gate electrode, a gate insulation layer, a source electrode, a drain electrode and an active layer arranged on a base substrate. The active layer includes an un-doped a-Si layer, a first doped a-Si layer and a second doped a-Si layer. One of the source electrode and the drain electrode is in contact with the first doped a-Si layer, and the other of the source electrode and the drain electrode is in contact with the second doped a-Si layer. The source electrode and the drain electrode are on different horizontal planes and spaced apart from each other, and the un-doped a-Si layer is positioned between the source electrode and the drain electrode.
First Claim
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International Classification(s)
- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 7 Age
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