Fabricating method of fin-type semiconductor device
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United States of America Patent
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Mar 20, 2018
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app pub date -
Jul 18, 2016
filing date -
Jul 29, 2015
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Abstract
In accordance with various embodiments of the disclosed subject matter, a semiconductor device, and a fabricating method thereof are provided. In some embodiments, the semiconductor device comprises: a semiconductor substrate, wherein a plurality of fins are projected on a surface of the semiconductor substrate; and an insulating layer on side walls of the plurality of fins, wherein the insulating layer is located on the surface of the semiconductor substrate, a surface of the insulating layer is lower than top surfaces of the plurality of fins, and a thermal conductivity of the insulating layer is larger than a thermal conductivity of silicon oxide.
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