Gallium nitride apparatus with a trap rich region
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 20, 2018
Issued Date -
N/A
app pub date -
May 26, 2016
filing date -
May 29, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method cold-melts a high conductivity region between a high-resistivity silicon substrate and a gallium-nitride layer to form a trap rich region that substantially immobilizes charge carriers in that region. Such a process should substantially mitigate the parasitic impact of that region on circuits formed at least in part by the gallium-nitride layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully