Semiconductor wafer and a method for producing the semiconductor wafer
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United States of America Patent
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Mar 20, 2018
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Sep 11, 2014
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Sep 24, 2013
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Abstract
A semiconductor wafer has a silicon single crystal substrate having a top surface and a stack of layers covering the top surface, the stack of layers containing an AlN nucleation layer covering the top surface of the silicon single crystal substrate, wherein the top surface of the silicon single crystal substrate has a crystal lattice orientation which is off-oriented with respect to the {111}-plane, the normal to the top surface being inclined with respect to the <111>-direction toward the <11-2>-direction by an angle θ of not less than 0.3° and not more than 6°, the azimuthal tolerance of the inclination being ±0.1°; and an AlGaN buffer layer which covers the AlN nucleation layer and contains one or more AlxGa1-xN layers, wherein 0<×<1.
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