Magnetoresistive random access memory (MRAM) die including a magnetic field sensing structure

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United States of America Patent

PATENT NO 9923025
SERIAL NO

14482898

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Abstract

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A magnetoresistive random access memory (MRAM) die may include a plurality of MRAM cells, and a magnetic field sensing structure. The magnetic field sensing structure may include a movable portion and a magnetic material attached to the movable portion. The movable portion may move in response to exposure of the magnetic material to an external magnetic field.

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Patent Owner(s)

Patent OwnerAddress
HONEYWELL INTERNATIONAL INC PATENT SERVICES M/S AB/2B101 COLUMBIA ROAD POB 2245 MORRISTOWN NJ 07962-2245

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Katti, Romney R Shorewood, US 88 1354
Westberg, Bryan C Delano, US 2 2

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